Shenzhen basic Semiconductor Co., Ltd. is a leading enterprise in China's third-generation semiconductor industry, specializing in the R & D and industrialization of silicon carbide power devices. It has R & D centers in Pingshan, Shenzhen Nanshan, Beijing Yizhuang, Nanjing Pukou and Nagoya, Japan. It has an international R & D team, with core members from Tsinghua University, Cambridge University, Royal Swedish Institute of technology More than ten doctors from well-known universities and research institutions at home and abroad, such as the Chinese Academy of Sciences. Basic semiconductor has mastered the international leading silicon carbide core technology, developed the whole industrial chain covering silicon carbide power devices, such as material preparation, chip design, wafer manufacturing, packaging test and driving application, and successively launched a series of products such as full current and voltage grade silicon carbide Schottky diodes, 1200V silicon carbide MOSFETs that have passed the industrial reliability test, vehicle specification grade all silicon carbide power modules, and their performance has reached the international advanced level. Among them, 650V silicon carbide Schottky diode products have passed aec-q101 reliability test, and other products on the same platform will gradually complete this test. Basic semiconductor silicon carbide power device products are widely used in new energy, electric vehicles, smart grid, rail transit, industrial control, national defense and military industry.
Development and industrialization of silicon carbide power devices (SiC MOS)
New energy, electric vehicles, smart grid, rail transit, industrial control and other fields
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